Vibrational Properties of Defective Oxides and 2D Nanolattices

缺陷氧化物与二维纳米点阵的振动性能:源自第一原理模拟的深刻见解

光电子学与激光技术

原   价:
1105
售   价:
884.00
优惠
平台大促 低至8折优惠
作      者
出版时间
2014年06月15日
装      帧
精装
ISBN
9783319071817
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页      码
143
语      种
英语
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图书简介
Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.This thesis is devoted to the first-principles modeling of the vibrational properties of these novel channel materials.The first part of the thesis focuses on the vibrational properties of various oxides on Ge, making it possible to identify the vibrational signature of specific defects which could hamper the proper functioning of MOSFETs.The second part of the thesis reports on the electronic and vibrational properties of novel 2D materials like silicene and germanene, the Si and Ge 2D counterparts of graphene. The interaction of these 2D materials with metallic and non-metallic substrates is investigated. It was predicted, for the first time, and later experimentally confirmed, that silicene could be grown on a non-metallic template like MoS_2, a breakthrough that could open the door to the possible use of silicene in future nanoelectronic devices.
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